Memristor-Based Nanoelectronic Computing Circuits and Architectures by Ioannis Vourkas & Georgios Ch. Sirakoulis

Author:Ioannis Vourkas & Georgios Ch. Sirakoulis
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

In the ideal reading case, where no current sneak paths are present, the equivalent circuit for the read operation with only one bit-line pulled up is a simple voltage divider formed by a pull-up resistor RPU and the accessed element, as shown in Fig. 5.6a. Considering a single memristor at each cross-point, then for a given β = R OFF/R ON ratio the achieved voltage swing ΔV for a certain applied pull-up voltage V PU is calculated as follows:

(5.1)

Fig. 5.6Read operation equivalent circuits in passive crossbar for both memory accessing schemes. a The ideal reading case with the accessed memristor forming a simple voltage divider with the pull-up resistor. b The realistic case with the inevitable parasitic resistance and c the realistic case when accessing entire word-lines instead of only one cell per time

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